Einzeltreffer — DigiBib

A memory device includes a test mode detector circuit that determines whether the memory device has entered a test mode based on at least one test mode entry signal received through at least one pin of a plurality of pins and generates a test mode detection signal, and a test pad connection circuit that electrically couples a first pin of the plurality of pins to a dedicated test pad of the test mode such that a signal applied to the first pin is transmitted to the dedicated test pad based on the test mode detection signal.

Titel:	MEMORY DEVICE INCLUDING TEST PAD CONNECTION CIRCUIT
Link:	Diesen Eintrag von USPTO anschauen (Volltext)
Veröffentlichung:	2024
Medientyp:	Patent
Sonstiges:	Nachgewiesen in: USPTO Patent Applications Sprachen: English Document Number: 20240145023 Publication Date: May 2, 2024 Appl. No: 18/341192 Application Filed: June 26, 2023 Assignees: Samsung Electronics Co., Ltd. (Suwon-si, KR) Claim: 1. A memory device for receiving a signal from an external device through a plurality of pins, comprising: a test mode detector circuit configured to determine whether the memory device has entered a test mode based on at least one test mode entry signal received through at least one pin of the plurality of pins and to generate a test mode detection signal; and a test pad connection circuit configured to electrically couple a first pin of the plurality of pins to a dedicated test pad corresponding to the test mode such that a signal applied to the first pin is transmitted to the dedicated test pad based on the test mode detection signal. Claim: 2. The memory device of claim 1, wherein the memory device is configured to have a test mode execution signal applied through the first pin transmitted to the dedicated test pad and to perform a test operation corresponding to the test mode signal, after the dedicated test pad and the first pin are electrically coupled. Claim: 3. The memory device of claim 2, further comprising: a test mode flag generator circuit configured to generate a flag indicating that the memory device has entered the test mode, based on the test mode detection signal. Claim: 4. The memory device of claim 1, wherein the at least one pin of the plurality of pins is the first pin. Claim: 5. The memory device of claim 1, wherein the at least one pin of the plurality of pins is a control pin configured to receive a control signal of the memory device and is different from the first pin. Claim: 6. The memory device of claim 1, wherein the at least one pin is a control pin configured to receive a control signal of the memory device, and the test mode detector circuit is configured to determine whether the test mode has been entered based on the test mode entry signal and a pattern of data received through a data input/output pin among the plurality of pins. Claim: 7. The memory device of claim 4, wherein the test mode detector circuit includes a counter configured to count a number of times of toggling of the test mode entry signal, and the test mode detector circuit is configured to generate the test mode detection signal based on whether the number of times of the toggling is equal to a number “n” (“n” is a natural number greater than or equal to one). Claim: 8. The memory device of claim 3, wherein the test pad connection circuit is configured to generate a connection activation completion signal after the dedicated test pad has been coupled to the first pin, and the test mode flag generator circuit is configured to generate the flag based on the connection activation completion signal and the test mode detection signal. Claim: 9. The memory device of claim 3, wherein the test mode flag generator circuit is configured to enable the flag while a test operation corresponding to the test mode execution signal is performed, and the test mode flag generator circuit is configured to disable the flag upon the test operation being finished. Claim: 10. The memory device of claim 2, wherein the memory device is configured to have control signals corresponding to remaining pins other than the first pin among the plurality of pins replaced using a pattern of data received through a data input/output pin among the plurality of pins during a period of toggling of the test mode execution signal transferred to the dedicated test pad and upon a test operation corresponding to the test mode execution signal being performed. Claim: 11. The memory device of claim 10, further comprising: a memory configured to store a mode selection table defining a matching relationship between patterns of the data and modes related to functions of the control signals corresponding to the remaining pins, wherein the memory is configured to have a mode corresponding to the pattern of the data enabled based on the mode selection table. Claim: 12. A test method performed in a memory device that receives a signal from an external test device through a plurality of pins, comprising: receiving, from the external test device, at least one test mode entry signal through at least one pin of the plurality of pins; generating a test mode detection signal by determining whether the memory device has entered a test mode based on the at least one test mode entry signal; electrically coupling a dedicated test pad corresponding to the test mode, to a first pin among the plurality of pins, based on the test mode detection signal; and performing a test operation corresponding to the test mode signal based on a test mode execution signal transmitted from the external test device to the dedicated test pad through the first pin. Claim: 13. The test method of claim 12, further comprising: generating a flag indicating that the memory device has entered the test mode, based on the test mode detection signal and after the test mode detection signal is generated. Claim: 14. The test method of claim 12, wherein the plurality of pins include at least one control pin configured to receive a control signal from the external test device and at least one data input/output pin configured to receive data from the external test device. Claim: 15. The test method of claim 12, wherein the at least one pin among the plurality of pins is the first pin. Claim: 16. The test method of claim 14, wherein the at least one pin is a part of the at least one control pin, and the generating of the test mode detection signal includes determining whether the test mode has been entered based on the test mode entry signal and data received through the data input/output pin. Claim: 17. The test method of claim 15, wherein the generating of the test mode detection signal includes generating the test mode detection signal based on whether a number of times of toggling of the test mode entry signal is equal to a number “n” (“n” is a natural number greater than or equal to one). Claim: 18. The test method of claim 14, wherein control signals corresponding to remaining pins other than the first pin among the at least one control pin are replaced using a pattern of data received through a data input/output pin among the plurality of pins during a period of toggling of the test mode execution signal transferred to the dedicated test pad and upon a test operation corresponding to the test mode execution signal being performed. Claim: 19. A semiconductor device for receiving a signal from an external test device through a plurality of pins and performing a test, comprising: processing circuitry configured to execute machine-readable instructions that, when executed by the processing circuitry, cause the semiconductor device to determine whether the semiconductor device has entered a test mode based on at least one test mode entry signal received from the external test device through at least one of the plurality of pins, and to electrically couple a plurality of dedicated test pads corresponding to the test mode to corresponding pins among the plurality of pins, respectively upon determining that the semiconductor device has entered the test mode, wherein the plurality of dedicated test pads are covered by an insulating layer and are not exposed to outside of the semiconductor device. Claim: 20. The semiconductor device of claim 19, wherein the memory device is configured to perform a test operation corresponding to a test mode execution signal based on the test mode execution signal transmitted from the external test device to each of the plurality of dedicated test pads through the corresponding pins, after the plurality of dedicated test pads and the corresponding pins are electrically coupled. Current International Class: 11; 11

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MEMORY DEVICE INCLUDING TEST PAD CONNECTION CIRCUIT